| Manufacturer | Renesas Electronics America |
| Series | - |
| Packaging | Bulk |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 32W (Tc) |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 18A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 Isolated Tab |
| Package / Case | TO-220-3 Isolated Tab |
MOSFET P-CH 60V 36A TO-220 - P-Channel 60V 36A (Tc) 2W (Ta), 32W (Tc) Through Hole TO-220 Isolated Tab
Транзисторы полевые 2SJ673-AZ
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