| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 10A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-220SM |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
MOSFET N-CH 250V 20A TO220SM - N-Channel 250V 20A (Ta) 100W (Tc) Surface Mount TO-220SM
Транзисторы полевые 2SK2993(TE24L,Q)
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