| Manufacturer | Renesas Electronics America |
| Series | - |
| Packaging | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 40W (Tc) |
| Rds On (Max) @ Id, Vgs | 52 mOhm @ 14A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251 (MP-3) |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
MOSFET N-CH 100V MP-3/TO-251 - N-Channel 100V 28A (Ta) 1W (Ta), 40W (Tc) Through Hole TO-251 (MP-3)
Транзисторы полевые 2SK3483-AZ
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