| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Bulk |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 196nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 12400pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8 mOhm @ 23A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220NIS |
| Package / Case | TO-220-3 Full Pack |
MOSFET N-CH 60V 45A TO220NIS - N-Channel 60V 45A (Ta) 45W (Tc) Through Hole TO-220NIS
Транзисторы полевые 2SK3844(Q)
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