| Manufacturer | ON Semiconductor |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 220nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 12500pF @ 20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 90W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 50A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
MOSFET N-CH 60V 100A - N-Channel 60V 100A (Ta) 1.65W (Ta), 90W (Tc) Through Hole TO-262-3
Транзисторы полевые 2SK4066-1E
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