| Manufacturer | Alpha & Omega Semiconductor Inc. |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta), 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2065pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 100W (Tc) |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 18A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251A |
| Package / Case | TO-251-3 Stub Leads, IPak |
MOSFET N-CH - N-Channel 200V 3A (Ta), 18A (Tc) 2.5W (Ta), 100W (Tc) Through Hole TO-251A
Транзисторы полевые AOI2210
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