| Manufacturer | Alpha & Omega Semiconductor Inc. |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta), 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 52W (Tc) |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251A |
| Package / Case | TO-251-3 Stub Leads, IPak |
MOSFET N-CH 60V 6.5A TO251A - N-Channel 60V 6.5A (Ta), 30A (Tc) 2.5W (Ta), 52W (Tc) Through Hole TO-251A
Транзисторы полевые AOI4130
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