| Manufacturer | Alpha & Omega Semiconductor Inc. |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 51A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4050pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 33.3W (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262F |
| Package / Case | TO-262-3 Full Pack, I²Pak |
MOSFET N-CH 60V 13A TO262F - N-Channel 60V 13A (Ta), 51A (Tc) 2.1W (Ta), 33.3W (Tc) Through Hole TO-262F
Транзисторы полевые AOWF2606
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