| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 190A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9830pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 110A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK (7-Lead) |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
MOSFET N-CH 100V 190A D2PAK-7P - N-Channel 100V 190A (Tc) 380W (Tc) Surface Mount D2PAK (7-Lead)
Транзисторы полевые AUIRFS4010-7P
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