| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 97A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4820pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 58A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Base Part Number | IRFS4410 |
MOSFET N-CH 100V 97A D2PAK - N-Channel 100V 97A (Tc) 230W (Tc) Surface Mount D2PAK
Транзисторы полевые AUIRFS4410Z
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