| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Rds On (Max) @ Id, Vgs | 185 mOhm @ 6A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-PAK (TO-252AA) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
MOSFET N-CH 100V 10A DPAK - N-Channel 100V 10A (Tc) 48W (Tc) Surface Mount D-PAK (TO-252AA)
Транзисторы полевые AUIRLR120N
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