| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta), 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 43µA |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 76W (Tc) |
| Rds On (Max) @ Id, Vgs | 20.5 mOhm @ 45A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 |
| Package / Case | 8-PowerTDFN |
MOSFET N-CH 100V 45A TDSON-8 - N-Channel 100V 7.4A (Ta), 45A (Tc) 76W (Tc) Surface Mount PG-TDSON-8
Транзисторы полевые BSC205N10LS G
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