| Manufacturer | Diodes Incorporated |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 48.7nC @ 8V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 2530pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 6.4A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | U-DFN2020-6 (Type E) |
| Package / Case | 6-UDFN Exposed Pad |
MOSFET P-CH 25V 6.7A 6UDFN - P-Channel 25V 6.7A (Ta) 800mW (Ta) Surface Mount U-DFN2020-6 (Type E)
Транзисторы полевые DMP2039UFDE-7
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