| Manufacturer | ON Semiconductor |
| Series | PowerTrench® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 405pF @ 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.4W (Ta) |
| Rds On (Max) @ Id, Vgs | 142 mOhm @ 2.3A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-MicroFET (1.6x1.6) |
| Package / Case | 6-UFDFN Exposed Pad |
MOSFET P-CH 20V 2.6A 6MICROFET - P-Channel 20V 2.6A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (1.6x1.6)
Транзисторы полевые FDFME2P823ZT
Приведенная информация носит справочный характер и не является публичной офертой в соответствии с пунктом 2 статьи 437 ГК РФ. Общую стоимость с учётом доставки Вам сообщит менеджер.