| Manufacturer | ON Semiconductor |
| Series | QFET® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Rds On (Max) @ Id, Vgs | 170 mOhm @ 9.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 (Y-Forming) |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
MOSFET N-CH 200V 19A TO-220F - N-Channel 200V 19A (Tc) 43W (Tc) Through Hole TO-220F-3 (Y-Forming)
Транзисторы полевые FQPF19N20CYDTU
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