| Manufacturer | Global Power Technologies Group |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 353pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6 Ohm @ 900mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-Pak |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
MOSFET N-CH 650V 1.8A IPAK - N-Channel 650V 1.8A (Tc) 52W (Tc) Through Hole I-Pak
Транзисторы полевые GP2M002A065PG
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