| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 342pF @ 100V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 27.2W (Tc) |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 1.8A, 13V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO-220-FP |
| Package / Case | TO-220-3 Full Pack |
MOSFET N-CH 500V 6.1A TO220FP - N-Channel 500V 6.1A (Tc) 27.2W (Tc) Through Hole PG-TO-220-FP
Транзисторы полевые IPA50R650CE
Приведенная информация носит справочный характер и не является публичной офертой в соответствии с пунктом 2 статьи 437 ГК РФ. Общую стоимость с учётом доставки Вам сообщит менеджер.