| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ CE |
| Packaging | Tube |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 240µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 2.3A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220 Full Pack |
| Package / Case | TO-220-3 Full Pack |
MOSFET N-CH 800V TO-220-3 - N-Channel 800V 2.8A (Tc) 31W (Tc) Through Hole PG-TO220 Full Pack
Транзисторы полевые IPA80R1K4CEXKSA1
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