| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| Packaging | Bulk |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 100V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 83W (Tc) |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 3.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
MOSFET NCH 600V 10.6A TO252 - N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3
Транзисторы полевые IPD60R380E6ATMA2
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