| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| Packaging | Cut Tape (CT) |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA |
| Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 373pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Rds On (Max) @ Id, Vgs | 750 mOhm @ 2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
MOSFET N-CH 600V 5.7A TO252-3 - N-Channel 600V 5.7A (Tc) 48W (Tc) Surface Mount PG-TO252-3
Транзисторы полевые IPD60R750E6BTMA1
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