| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Rds On (Max) @ Id, Vgs | 6 mOhm @ 70A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
MOSFET N-CH 40V 82A TO252-3 - N-Channel 40V 82A (Tc) 79W (Tc) Surface Mount PG-TO252-3
Транзисторы полевые IPD70N04S3-07
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