| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 120µA |
| Gate Charge (Qg) (Max) @ Vgs | 92nC @ 10V |
| Vgs (Max) | +5V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 5430pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 80A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3-1 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
MOSFET P-CH TO262-3 - P-Channel 40V 80A (Tc) 75W (Tc) Through Hole PG-TO262-3-1
Транзисторы полевые IPI80P04P4L08AKSA1
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