| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 155µA |
| Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8110pF @ 40V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.75 mOhm @ 100A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO-220-3 |
| Package / Case | TO-220-3 |
MOSFET N-CH 80V 100A TO220-3 - N-Channel 80V 100A (Tc) 214W (Tc) Through Hole PG-TO-220-3
Транзисторы полевые IPP037N08N3GHKSA1
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