| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| Packaging | Bulk |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 28.4W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.1A, 10V |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
MOSFET NCH 600V 3.2A TO251 - N-Channel 600V 3.2A (Tc) 28.4W (Tc) Through Hole PG-TO251
Транзисторы полевые IPU60R1K4C6BKMA1
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