| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 195nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 8555pF @ 16V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 2.45 mOhm @ 27A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
MOSFET N-CH 20V 27A 8-SO - N-Channel 20V 27A (Ta) 2.5W (Ta) Surface Mount 8-SO
Транзисторы полевые IRF6201PBF
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