| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 37A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 13V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 15W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9 mOhm @ 12A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET S1 |
| Package / Case | DirectFET™ Isometric S1 |
MOSFET N-CH 25V 12A DIRECTFET - N-Channel 25V 12A (Ta), 37A (Tc) 1.8W (Ta), 15W (Tc) Surface Mount DIRECTFET S1
Транзисторы полевые IRF6710S2TR1PBF
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