| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta), 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 4.2A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ MZ |
| Package / Case | DirectFET™ Isometric MZ |
MOSFET N-CH 200V 3.4A DIRECTFET - N-Channel 200V 3.4A (Ta), 19A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount DIRECTFET™ MZ
Транзисторы полевые IRF6785MTR1PBF
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