| Manufacturer | Infineon Technologies |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta), 14.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 515pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 30W (Tc) |
| Rds On (Max) @ Id, Vgs | 62 mOhm @ 8.9A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET SB |
| Package / Case | DirectFET™ Isometric SB |
MOSFET N-CH 100V 4.1A DFET SB - N-Channel 100V 4.1A (Ta), 14.4A (Tc) 2.4W (Ta), 30W (Tc) Surface Mount DIRECTFET SB
Транзисторы полевые IRF7665S2TR1PBF
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