| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Discontinued at Digi-Key |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 20V |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 13.3 mOhm @ 9.2A, 20V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
MOSFET P-CH 30V 9.2A 8-SO - P-Channel 30V 9.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
Транзисторы полевые IRF9393PBF
Приведенная информация носит справочный характер и не является публичной офертой в соответствии с пунктом 2 статьи 437 ГК РФ. Общую стоимость с учётом доставки Вам сообщит менеджер.