| Manufacturer | Infineon Technologies |
| Series | FASTIRFET™, HEXFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 13V |
| FET Feature | - |
| Power Dissipation (Max) | 3.4W (Ta), 46W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | 8-PowerTDFN |
| Base Part Number | IRFH4226 |
MOSFET N-CH 25V 70A PQFN 5X6 - N-Channel 25V 30A (Ta), 70A (Tc) 3.4W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
Транзисторы полевые IRFH4226TRPBF
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