| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Ta), 46A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 8.3W (Tc) |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 9.3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PQFN (5x6) Single Die |
| Package / Case | 8-PowerVDFN |
MOSFET N-CH 100V 9.3A PQFN56 - N-Channel 100V 9.3A (Ta), 46A (Tc) 3.1W (Ta), 8.3W (Tc) Surface Mount PQFN (5x6) Single Die
Транзисторы полевые IRFH5053TR2PBF
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