| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5114pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 110W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.85 mOhm @ 50A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PQFN (5x6) Single Die |
| Package / Case | 8-PowerVDFN |
MOSFET N-CH 30V 35A 5X6 PQFN - N-Channel 30V 35A (Ta), 100A (Tc) 3.6W (Ta), 110W (Tc) Surface Mount PQFN (5x6) Single Die
Транзисторы полевые IRFH5301TR2PBF
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