| Manufacturer | ON Semiconductor |
| Series | - |
| Packaging | Tape & Box (TB) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 275pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 300mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
MOSFET N-CH 250V 0.6A TO-92 - N-Channel 250V 600mA (Ta) 1.8W (Ta) Through Hole TO-92-3
Транзисторы полевые IRFN214BTA_FP001
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