| Manufacturer | ON Semiconductor |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 980pF @ 20V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 52W (Tc) |
| Rds On (Max) @ Id, Vgs | 420 mOhm @ 5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK/TP |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
MOSFET N-CH 250V 10A IPAK/TP - N-Channel 250V 10A (Ta) 1W (Ta), 52W (Tc) Through Hole IPAK/TP
Транзисторы полевые NDDP010N25AZ-1H
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