| Manufacturer | Renesas Electronics America |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 97W (Tc) |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 16.5A, 10V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HSON |
| Package / Case | 8-SMD, Flat Lead Exposed Pad |
MOSFET N-CH 60V 33A 8HSON - N-Channel 60V 33A (Tc) 1W (Ta), 97W (Tc) Surface Mount 8-HSON
Транзисторы полевые NP33N06YDG-E1-AY
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