| Manufacturer | ON Semiconductor |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 93.75W (Tj) |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 16A, 5V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-Pak |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
MOSFET N-CH 60V 32A IPAK - N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Through Hole I-Pak
Транзисторы полевые NTD32N06L-1G
Приведенная информация носит справочный характер и не является публичной офертой в соответствии с пунктом 2 статьи 437 ГК РФ. Общую стоимость с учётом доставки Вам сообщит менеджер.