| Manufacturer | ON Semiconductor |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 16V |
| Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 51A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.8nC @ 4.5V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 963pF @ 12V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 34.9W (Tc) |
| Rds On (Max) @ Id, Vgs | 8.75 mOhm @ 15A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-Pak |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
MOSFET N-CH 16V 9.6A IPAK - N-Channel 16V 9.6A (Ta), 51A (Tc) 1.2W (Ta), 34.9W (Tc) Through Hole I-Pak
Транзисторы полевые NTD3813N-1G
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