| Manufacturer | ON Semiconductor |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 85A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17.7nC @ 5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050pF @ 20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 78.1W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-Pak |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
MOSFET N-CH 24V 12A IPAK - N-Channel 24V 12A (Ta), 85A (Tc) 1.25W (Ta), 78.1W (Tc) Through Hole I-Pak
Транзисторы полевые NTD85N02R-1G
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