| Manufacturer | ON Semiconductor |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 66A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850pF @ 12V |
| FET Feature | - |
| Power Dissipation (Max) | 870mW (Ta), 41.7W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9 mOhm @ 30A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
MOSFET N-CH 30V 66A SO-8FL - N-Channel 30V 9.5A (Ta), 66A (Tc) 870mW (Ta), 41.7W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Транзисторы полевые NTMFS4826NET1G
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