Manufacturer | ON Semiconductor |
Series | - |
Packaging | Tape & Reel (TR) |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 43.5nC @ 11.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2354pF @ 12V |
FET Feature | - |
Power Dissipation (Max) | 870mW (Ta), 42.4W (Tc) |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Package / Case | 8-PowerTDFN, 5 Leads |
MOSFET N-CH 30V 9.5A SO-8FL - N-Channel 30V 9.5A (Ta), 64A (Tc) 870mW (Ta), 42.4W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Транзисторы полевые NTMFS4839NHT1G
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