Manufacturer | ON Semiconductor |
Series | - |
Packaging | Cut Tape (CT) |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 13.2A (Ta), 117A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 49.5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3233pF @ 12V |
FET Feature | - |
Power Dissipation (Max) | 930mW (Ta), 73.5W (Tc) |
Rds On (Max) @ Id, Vgs | 3 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Package / Case | 8-PowerTDFN, 5 Leads |
MOSFET N-CH 30V SO-8FL - N-Channel 30V 13.2A (Ta), 117A (Tc) 930mW (Ta), 73.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Транзисторы полевые NTMFS4898NFT1G
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