| Manufacturer | ON Semiconductor |
| Series | FETKY™ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.34A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 16V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 730mW (Ta) |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 3.05A, 10V |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
MOSFET P-CH 20V 2.34A 8-SOIC - P-Channel 20V 2.34A (Ta) 730mW (Ta) Surface Mount 8-SOIC
Транзисторы полевые NTMSD3P102R2SG
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