| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2170pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 15A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HVSON (6x5) |
| Package / Case | 8-VDFN Exposed Pad |
MOSFET N-CH 200V 17.5A 8HVSON - N-Channel 200V 17.5A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (6x5)
Транзисторы полевые PHM15NQ20T,518
Приведенная информация носит справочный характер и не является публичной офертой в соответствии с пунктом 2 статьи 437 ГК РФ. Общую стоимость с учётом доставки Вам сообщит менеджер.