| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 30.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 26.6nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 20V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 10A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HVSON (6x5) |
| Package / Case | 8-VDFN Exposed Pad |
MOSFET N-CH 100V 30.7A 8HVSON - N-Channel 100V 30.7A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (6x5)
Транзисторы полевые PHM25NQ10T,518
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