| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 12.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 9.8nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 23W (Tc) |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 10A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
MOSFET N-CH 55V 12.9A SOT186A - N-Channel 55V 12.9A (Tc) 23W (Tc) Through Hole TO-220-3
Транзисторы полевые PHX20N06T,127
Приведенная информация носит справочный характер и не является публичной офертой в соответствии с пунктом 2 статьи 437 ГК РФ. Общую стоимость с учётом доставки Вам сообщит менеджер.