| Manufacturer | Nexperia USA Inc. |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 485mW (Ta), 6.25W (Tc) |
| Rds On (Max) @ Id, Vgs | 102 mOhm @ 2.7A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DFN2020-6 |
| Package / Case | 6-UDFN Exposed Pad |
MOSFET P-CH 20V 2.7A HUSON6 - P-Channel 20V 2.7A (Ta) 485mW (Ta), 6.25W (Tc) Surface Mount DFN2020-6
Транзисторы полевые PMFPB8040XP,115
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