| Manufacturer | Nexperia USA Inc. |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 12.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 612pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
| Rds On (Max) @ Id, Vgs | 43 mOhm @ 4.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-DFN2020MD (2x2) |
| Package / Case | 6-UDFN Exposed Pad |
MOSFET N-CH 60V 12.9A 6DFN - N-Channel 60V 12.9A (Tc) 1.7W (Ta), 12.5W (Tc) Surface Mount 6-DFN2020MD (2x2)
Транзисторы полевые PMPB40SNA,115
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