| Manufacturer | NXP USA Inc. |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 103nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5494pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 25A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
MOSFET N-CH 60V 75A TO-220F - N-Channel 60V 75A (Tc) 55W (Tc) Through Hole TO-220F
Транзисторы полевые PSMN3R9-60XSQ
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