| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 38.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21.5nC @ 10V |
| Vgs (Max) | +20V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 19.8W (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 10A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
MOSFET N-CH 30V 38.3A 1212-8 - N-Channel 30V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
Транзисторы полевые SISA18DN-T1-GE3
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