| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 124nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 13.1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3-1 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
MOSFET N-CH 650V 20.7A TO-262 - N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole PG-TO262-3-1
Транзисторы полевые SPI20N60CFDHKSA1
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